j. cs s.11s.u ucti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 high speed silicon controlled rectifier 1200 volts 63a rms c148 silicon controlled rectifier is designed for power switching at high frequencies. this is an vll-dif fused device which is consider- able smaller in size than comparably rated high power scr's. features: ? fully characterized for operation inverter and chopper applications. ? high dv/dt with selections available. ? excellent surge and i2t ratings providing easy fusing. ? compact hermetic package, 54 ? 28 stud. maximum allowable ratings types c148m c148s c148n c148t c148p C148PA c148pb repetitive peak off-state voltage, vorm? tj = -40c to +125c 600 volts 700 800 900 1000 1100 1200 repetitive peak reverse voltage, vrrml tj = -40c to +125c 600 volts 700 800 900 1000 1100 1200 non-repetitive peak reverse voltage, vrsm ? tj - +125c 720 volts 840 960 1080 1200 1320 1440 1 half sinewave waveform, 10 ms max. pulse width. rms on-state current, ix(rms) peak one cycle surge (non-repetitive) on-state current, itsm (60 hz) peak one cycle surge (non-repetitive) on-state current, itsm (50 hz) i2t (for fusing) for times > 1.5 milliseconds i2t (for fusing) for times > 8.3 milliseconds critical rate-of-rise of on-state current, non-repetitive critical rate-of-rise of on-state current, repetitive average gate power dissipation, pq(av) storage temperature, tstg operating temperature, tj stud torque 63 amperes 700 amperes 670 amperes 1360 (rms ampere)2 seconds 2000 (rms ampere)2 seconds 100 a/ms t 75 a/ms t 2 watts -40cto+150c -40cto+125c 30 lb.-in. 3.4 n-rn quality semi-conductors
u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 test repetitive peak reverse and off-state current thermal resistance critical rate-of-rise of off-state voltage (higher values may cause device switching) symbol irrm and jdrm r0jc dv/dt min. - 200 typ. 7 - max. 12 .35 units ma c/watt v/jusec test conditions tj = -40cto+125c, v = vdrm = vrrm junction-to-case tj = +125c, gate open. vdrm = rated using linear or exponential rising waveform. v^dm fxnnnenti-il dv/rtr - l>km ( f.v*\r minimum dv/dt selections available - consult factory. dc gate trigger current dc gate trigger voltage peak on-state voltage conventional circuit commutated turn-off time c148 - 30 chs - 40 chs - 30 chs - 40 conventional circuit commutated turn-off time (with feedback diode) chs - 30 chs 40 igt vgt 9 vtm tq *q - - - - - 0.25 ? - - - - - - - ? ? - 38 48 45 55 150 300 125 3.0 3.5 ? 4.0 30 40 t t - madc vdc volts msec msec tc = +25 c, vd = 6 vdc, rl = 3 ohms tc = -40 c, vd = 6 vdc, rl = 3 ohms tc = +125c, vd = 6 vdc, rl = 3 ohms tc = 25c, vd = 6 vdc, rl = 3 ohms tc = -40 c, vd = 6 vdc, rl = 3 ohms tc = +125c, rated vdrm, rl = 1000 ohms tc = +25 c, itm =500 amps peak, 1 millisecond wide pulse. duty cycle < 1% (1) tc =+125c (2) itm = 150 amps. (3) vr = 50 volts min. (4) vdrm (reapplied) (5) rate-of-rise of reapplied off -state voltage = 20 v/jusec (linear). (6) commutation di/dt = 5 amps/^sec (7) repetition rate = 1 pps. (8) gate bias during turn-off interval = 0 volts, 100 ohms (1) tc =+125c (2) itm = 150 amps (3) vr = 50 volts min. (4) vdrm (reapplied) (5) rate-of-rise of reapplied off-state voltage = 200 v/aisec (linear). (6) commutation di/dt = 5 amps/msec. (7) repetition rate = 1 pps. (8) gate bias during turn-off interval = 0 volts, 100 ohms. (1) tc =+125c (2) itm = 15 amps (3) vr = 1 volt (4) vdrm (reapplied) (5) rate-of-rise of off-state voltage = 200 v//nsec (linear). (6) commutation di/dt = 5 amps/msec. (7) repetition rate = 1 pps. (8) gate bias during turn-off interval = 0 volts, 100 ohms. quality semi-conductors
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